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TC58NVG0S3AFT05

Part Number	TC58NVG0S3AFT05
Manufacturer	Toshiba
Description	1 GBit CMOS NAND EPROM
Published	Jul 6, 2005
Detailed Description	www.DataSheet4U.com TC58NVG0S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × ...
Datasheet	TC58NVG0S3AFT05 PDF File

Overview

www.
DataSheet4U.
com TC58NVG0S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BITS) CMOS NAND EEPROM DESCRIPTION The TC58NVG0S3A is a single 3.
3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks.
The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG0S3A is a serial-type memory device which utilizes the I/O pins ...

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