512 MBit CMOS NAND EPROM
Description
TC58NS512ADC
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 TM
512-MBIT (64M × 8 BITS) CMOS NAND E PROM (64M BYTE SmartMedia DESCRIPTION
)
The TC58NS512A is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device h...
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