DatasheetsPDF.com

TC58NS512DC

Part Number	TC58NS512DC
Manufacturer	Toshiba
Description	512 MBit CMOS NAND EPROM
Published	Jul 6, 2005
Detailed Description	TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E PROM...
Datasheet	TC58NS512DC PDF File

Overview

TC58NS512DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT (64M × 8 BITS) CMOS NAND E PROM (64M BYTE SmartMedia DESCRIPTION 2 TM ) The TC58NS512 is a single 3.
3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).
The TC58NS512 is a serial-type memory device which utilizes the I/O pins for both...

Similar Datasheet

TC58NS512ADC 512 MBit CMOS NAND EPROM - Toshiba
TC58NS512DC 512 MBit CMOS NAND EPROM - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)