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BBY58-02W

Siemens Group

Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) - Siemens Group


BBY58-02W
BBY58-02W

PDF File BBY58-02W PDF File



Description
BBY 58-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs • Very low capacitance spread 2 1 VES05991 Type BBY 58-02W Marking 8 Ordering Code Q62702-B916 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 .
.
.
+150 -55 .
.
.
+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-30-1998 1998-11-01 BBY 58-02W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Reverse current Symbol min.
Values typ.
max.
1 100 nA Unit IR IR - VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics Diode capacitance CT 17.
5 5.
5 18.
3 12.
35 8.
6 6 2.
15 3.
05 0.
25 0.
09 0.
6 19.
3 6.
6 3.
3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.
8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-30-1998 1998-11-01 BBY 58-02W Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -2 32 pF 1/°C CT 24 T Cc 20 10 -3 16 12 8 4 10 -4 0.
0 0.
5 1.
0 1.
5 2.
0 2.
5 3.
0 3.
5 4.
0 0 0.
0 0.
5 1.
0 1.
5 2.
0 2.
5 3.
0 3.
5 4.
0 V 5.
0 V 5.
0 VR VR Normalized diode capacitance C(TA) / C(25°C)= f (T A) f = 1MHz, VR = Parameter 1.
04 - CTA 1.
02 /C 25°C 1.
01 1.
00 0.
99 0.
98 0.
97 0.
96 0.
95 -30 1V 4V -10 10 30 50 70 °C 100 TA Semiconductor Group Semiconductor Group 33 Jul-30-1998 1998-11-01 ...



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