Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) - Siemens Group
Description
BBY 57-03W
Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • High capacitance ratio • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • For control elements such as TCXOs and VCXOs
2
1
VPS05176
Type BBY 57-03W
Marking 5 cathd.
red
Ordering Code Q62702-B918
Pin Configuration 1=C 2=A
Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 .
.
.
+150 -55 .
.
.
+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Au 1998-11-01 -03-1998
BBY 57-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Reverse current typ.
max.
1 100
Unit
IR IR
-
nA
VR = 8 V
Reverse current
VR = 8 V, TA = 65 °C
AC characteristics Diode capacitance
CT
16.
5 4 17.
5 8.
7 7.
1 4.
73 2.
45 3.
7 0.
3 0.
09 0.
6 18.
6 5.
5 4.
5 -
pF
VR = 1 V, f = 1 MHz VR = 2.
5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/C T3 CT1/C T4 rs CC Ls
3 -
-
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance Ω pF nH
VR = 1 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Au 1998-11-01 -03-1998
BBY 57-03W
Diode capacitance CT = f (V R) f = 1MHz
Temperature coefficient of the diode capacitance TCc = f (VR)
10 -1
40
pF
1/°C
CT
30
T Cc
10 -2
25
20
15
10 -3
10
5 10 -4 0.
0
0 0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
V
4.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
V
4.
0
VR
VR
Normalized diode capacitance
C(TA) / C(25°C)= f (T A) f = 1MHz, VR = Parameter
1.
04
-
1V
CTA 1.
02 /C 25°C
1.
01 1.
00 0.
99 0.
98 0.
97 0.
96 0.
95 -30
4V
-10
10
30
50
70
°C
100
TA
Semiconductor Group Semiconductor Group
33
Au 1998-11-01 -03-1998
...
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