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GT60J321

Toshiba
Part Number GT60J321
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published May 21, 2005
Detailed Description GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Ap...
Datasheet PDF File GT60J321 PDF File

GT60J321
GT60J321

Overview
GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm · · · Enhancement-mode High speed: tf = 0.
30 µs (typ.
) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.
55 V (typ.
) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg ¾ Rating 600 ±25 60 120 60 120 200 150 -55~150 0.
8 Unit V V A A JEDEC W °C °C N･m ― ― 2-21F2C JEITA TOSHIBA Weight: 9.
...


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