N-Channel MOSFET
Description
May 1994
NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
60 and 54A, 80V.
RDS(ON) = 0.
022 and 0.
025Ω.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C
TC = 25°C unless otherwise noted
NDP708A NDP708AE NDB708A NDB708AE 80 80 ±20 ±40 60 180 150 1
NDP708B NDP708BE NDB708B NDB708BE
Units V V V V
54 162
A A W W/°C °C °C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
© 1997 Fairchild Semiconductor Corporation
NDP708.
SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanc...
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