PNP Silicon Transistor
Description
Semiconductor
SRA2210S
PNP Silicon Transistor
Descriptions
• Switching application • Interface circuit and driver circuit application
Features
• • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO.
SRA2210S Marking RAA Package Code SOT-23
Outline Dimensions
2.
4±0.
1 1.
30±0.
1
unit : mm
• Equivalent Circuit
C(OUT)
1
1.
90 Typ.
3 2
2.
9±0.
1
B(IN)
R1
R1 = 4.
7KΩ 0.
4 Typ.
0.
45~0.
60
E(COMMON) 0.
2 Min.
1.
12 Max.
0~0.
1
0.
124
PIN Connections 1.
Base 2.
Emitter 3.
Collector
0.
38
-0.
03 +0.
05
KSR-2030-000
1
SRA2210S
Absolute maximum ratings
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
-50 -50 -5 -100 200 150 -55 ~ 150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance
(Ta=25°C)
Symbol
ICBO IEBO hFE VCE(SAT) fT
*
Test Condition
VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.
5mA VCE=-10V, IC=-5mA -
Min.
Typ.
Max.
120 -0.
1 250 4.
7 -500 -500 -0.
3 -
Unit
nA nA V MHz KΩ
R1
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig.
1 hFE - IC Fig.
2 VCE(SAT) - IC
KSR-2030-000
2
...
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