Dual MOSFET
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
™ Data Sheet
Medium Power Surface Mount Products
MMDF6N02HD
Motorola Preferred Device
TMOS Dual N-Channel Field Effect Transistors
Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process.
These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance.
Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.
• • • • • • • Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided
G
DUAL TMOS POWER MOSFET 6.
0 AMPERES 20 VOLTS RDS(on) = 0.
035 OHM
™
D CASE 751–05, Style 11 SO–8
S Source–1 Gate–1 Source–2 Gate–2
1 2 3 4
8 7 6 5
Drain–1 Drain–1 Drain–2 Drain–2
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.
0 MΩ) Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 70°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes Symbol VDSS VDGR VGS ID ID IDM PD TJ, Tstg RθJA TL Value 20 20 ± 12 6.
5 6.
0 52 2.
0 – 55 to 150 62.
5 260 Unit Vdc Vdc Vdc Adc Apk Watts °C °C/W °C
DEV...
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