Switching Diode
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD6050LT1/D
Switching Diode
MMBD6050LT1
3
3 CATHODE
1 ANODE
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc
CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA PD 556 300 2.
4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBD6050LT1 = 5AM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1.
0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.
0 mAdc) (Figure 1) Capacitance (VR = 0 V) 1.
FR– 5 = 1.
0 0.
75 2.
Alumina = 0.
4 0.
3 V(BR) IR VF 0.
55 0.
85 trr C — — 0.
7 1.
1 4.
0 2.
5 ns pF 70 — — 0.
1 Vdc µAdc Vdc
0.
062 in.
0.
024 in.
99.
5% alumina.
Thermal Clad is a trademark of the Bergquist Company REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc.
1997
1
MMBD6050LT1
820 Ω +10 V 2.
0 k 100 µH 0.
1 µF DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.
0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.
0 mA) IF 0.
1 µF tr 10% tp t IF trr t
Notes: 1.
A 2.
0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2.
Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3.
tp » trr
Figure 1.
Recovery Time Equivalent Test Circuit
100 I F, FORWARD CURRENT (mA) TA = 85°C 10 TA = 25°C 1.
0 10 TA = 150°C TA = 125°C
TA = –40°C
I R , REVERSE CUR...
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