High-power GaAs FET
Description
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND /10W non - matched
DESCRIPTION
The MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use L & S band applications.
FEATURES
Class A operation
High output power
P1dB=40.0dBm(T.Y.P) @f=2.3GHz
High power gain
GLP=10.0dB(TYP.) @f=2.3GHz
High power added efficie...
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