Internally Clamped N-Channel IGBT
Description
MGP15N40CL, MGB15N40CL, MGC15N40CL Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
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• Gate–Emitter ESD Protection • Temperature Compensated Gate–Collector Voltage Clamp Limits • • • • •
Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG)
N–CHANNEL IGBT 15 A, 410 V VCE(on) = 1.
8 V MAX
C
G
RG RGE
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector–Emitter Voltage Collector–Gate Voltage Gate–Emitter Voltage Collector Current–Continuous @ TC = 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCES VCER VGE IC PD Value 440 440 22 15 136 1.
0 TJ, Tstg –55 to 175 Unit VDC VDC VDC ADC Watts W/°C °C D2PAK CASE 418B STYLE 3 G C TO–220 CASE 221A STYLE 9
MARKING DIAGRAMS
GP15N40CL ALYYWW
E
GB15N40CL ALYYWW
A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week
ORDERING INFORMATION
Device MGP15N40CL MGB15N40CLT4 MGC15N40CL Package TO–220 D2PAK Die Options Shipping 50 Units/Rail 800 Tape & Reel Not Applicable
© Semiconductor Components Industries, LLC, 2000
1
April, 2000 – Rev.
1
Publication Order Number: MGP15N40CL/D
MGP15N40CL, MGB15N40CL, MGC15N40CL
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ
Characteristic Single Pulse Collector–to–Emitter Avalanche Energy VCC = 50 V, VGE = 5 V, Pk IL = 14.
2 A, L = 3 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150°C
t150°C)
Symbol EAS 300 150 Value Unit mJ
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Jun...
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