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MG75J2YS50

Part Number	MG75J2YS50
Manufacturer	Toshiba
Description	Silicon N Channel IGBT GTR Module
Published	Apr 29, 2005
Detailed Description	TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 High Power Switching Applications Motor Control Applications l The ...
Datasheet	MG75J2YS50 PDF File

Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case.
l High input impedance.
l Includes a complete half bridge in one package.
l Enhancement-mode.
l High speed : tf = 0.
30µs(Max) (IC = 75A) trr = 0.
15µs(Max) (IF = 75A) l Low saturation voltage : VCE (sat) = 2.
70V (Max) (IC = 75A) Equivalent Circuit MG75J2YS50 Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal...

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MG75J2YS50 Silicon N Channel IGBT GTR Module - Toshiba

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