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MG200Q2YS50

Part Number	MG200Q2YS50
Manufacturer	Toshiba
Description	Silicon N Channel IGBT GTR Module
Published	Apr 29, 2005
Detailed Description	TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Appl...
Datasheet	MG200Q2YS50 PDF File

Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
3µs (Max.
) @Inductive Load l Low saturation voltage : VCE (sat) = 3.
6V (Max.
) l Enhancement-mode l Includes a complate half bridge in one ackage.
l The electrodes are isolated from case.
Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Termina...

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