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MG150J7KS50

Toshiba
Part Number MG150J7KS50
Manufacturer Toshiba
Description TOSHIBA GTR Module Silicon N Channel IGBT
Published Apr 29, 2005
Detailed Description MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Appli...
Datasheet PDF File MG150J7KS50 PDF File

MG150J7KS50
MG150J7KS50

Overview
MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications l l l l l The electrodes are isolated from case.
High input impedance 7 IGBTs built into 1 package.
Enhancement-mode High speed type IGBT : : : : Outline Weight: 520g Inverter stage VCE (sat) = 2.
8V (max) (@IC = 150A) tf = 0.
5µs (max) (@IC = 150A) trr = 0.
3µs (max) (@IF = 150A) l l : TOSHIBA 2-110A1B Equivalent Circuit 1 2001-08-16 MG150J7KS50 Inverter Stage Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 150 300 150 300 3...


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