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MG150J1BS11

Part Number	MG150J1BS11
Manufacturer	Toshiba
Description	N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published	Apr 29, 2005
Detailed Description	TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 MG150J1BS11 High Power Switching Applications Motor Control App...
Datasheet	MG150J1BS11 PDF File

Overview

TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Rating 600 ±20 150 300 450 150 −40 to 125 2500 (AC 1 min.
) 2/3 Unit V V A W °C °C V N·m ― ― 2-33F2A 1 2003-04-11 Electrical Characteristics (Ta = 25°C) Cha...

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MG150J1BS11 N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) - Toshiba

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