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MG120V2YS40

Part Number	MG120V2YS40
Manufacturer	Toshiba
Description	N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published	Apr 29, 2005
Detailed Description	TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 High Power Switching Applications Motor Control Applications MG12...
Datasheet	MG120V2YS40 PDF File

Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 High Power Switching Applications Motor Control Applications MG120V2YS40 Unit: mm l The electrodes are isolated from case.
l High input impedance l Includes a complete half bridge in one package.
l Enhancement-mode l High speed : tf = 1.
5µs (max) (IC = 120A) trr = 0.
6µs (max) (IF = 120A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj ...

Similar Datasheet

MG120V2YS40 N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) - Toshiba

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