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MG1200V1US51

Toshiba
Part Number MG1200V1US51
Manufacturer Toshiba
Description TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Published Apr 29, 2005
Detailed Description MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APP...
Datasheet PDF File MG1200V1US51 PDF File

MG1200V1US51
MG1200V1US51

Overview
MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES l High Input Impedance l Enhancement Mode l Electrodes are isolated from case.
EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS Collector−Emitter Voltage Gate−Emitter Voltage Collector Current DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal: M4/M8 Mounting ― RATING 1700 20 1200 2400 1200 2400 5560 −20~125 −40~125 5400 (AC 1min) 2/7 4 UNIT V V A Forward Current A W °C °C V N·m Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque 1 2001-06-26 MG120...


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