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MG1200FXF1US51

Part Number	MG1200FXF1US51
Manufacturer	Toshiba
Description	TOSHIBA GTR Module Silicon N-Channel IGBT
Published	Apr 29, 2005
Detailed Description	MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications...
Datasheet	MG1200FXF1US51 PDF File

Overview

MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications · · · High input impedance Enhancement mode Electrodes are isolated from case.
Equivalent Circuit C G E E E E C C C Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Peak 1 cycle surge current 10 ms (half sine) Symbol VCES VGES IC ICP IFSM Tj Tstg VIsol ¾ Rating 3300 ±20 1200 2400 10 -40~125 -40~125 6000 (AC 1 min) 2/7 Nm 4 Unit V V A A kA °C °C V Operating junction temperature Storage temperature range Isolation voltage Terminal: M4/M8 Screw torque Mounting Caution: MG1200FXF...

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MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT - Toshiba

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