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MG100Q1ZS50

Toshiba
Part Number MG100Q1ZS50
Manufacturer Toshiba
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 MG100Q1ZS50 High Power Switching Applications Motor Control Appl...
Datasheet PDF File MG100Q1ZS50 PDF File

MG100Q1ZS50
MG100Q1ZS50

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.
6V (Max) l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 255g Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC (25°C / 80°C) IC...


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