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MG100J7KS50

Part Number	MG100J7KS50
Manufacturer	Toshiba
Description	N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published	Apr 29, 2005
Detailed Description	TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 High Power Switching Applications Motor Control Applications MG10...
Datasheet	MG100J7KS50 PDF File

Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 High Power Switching Applications Motor Control Applications MG100J7KS50 Unit: mm l The electrodes are isolated from case.
l High input impedance l 7 IGBTs built into 1 package.
l Enhancement-mode l High speed type IGBT : VCE (sat) = 2.
5 V (max) (@IC = 100 A) : tf = 0.
5 µs (max) (@IC = 100 A) : trr = 0.
3 µs (max) (@IF = 100 A) Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 520g (typ.
) ― ― 2-110A1B 1 2001-08-16 Inverter Stage Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature ...

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MG100J7KS50 N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) - Toshiba

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