Dual PNP Transistor
Description
a
FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 V Max Low Noise: 1 nV/√Hz @ 1 kHz Max High Gain: 100 Min High Gain Bandwidth: 190 MHz Typ Tight Gain Matching: 3% Max Excellent Logarithmic Conformance: rBE Ӎ 0.
3 ⍀ typ
Low Noise, Matched Dual PNP Transistor
MAT03
PIN CONNECTION TO-78
(H Suffix)
GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance.
Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications.
Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors.
A low value of bulk resistance (typically 0.
3 Ω) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.
Each transistor is individually tested to data sheet specifications.
Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges.
To ensure the longterm stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse baseemitter junction potential.
This prevents a base-emitter breakdown condition that can result in degradation of gain and matching performance due to excessive breakdown current.
REV.
C
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© Analog Devices, Inc.
, 2002
MAT03–SPECIFICATIONS
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