Silicon epitaxial planar type (cathode common)
Description
Schottky Barrier Diodes (SBD)
MA3G751, MA3G751A
Silicon epitaxial planar type (cathode common)
Unit : mm
For switching power supply I Features
• Forward current (average) IF(AV): 20 A type • High reliability caused by sealed in the TOP-3F (Full-pack package) • Cathode common dual type • Low forward rise voltage VF
0.
7
15.
0 ± 0.
3 11.
0 ± 0.
2
5.
0 ± 0.
2 3.
2
21.
0 ± 0.
5 15.
0 ± 0.
2
φ 3.
2 ± 0.
1
16.
2 ± 0.
5 12.
5 3.
5 Solder Dip
2.
0 ± 0.
2
2.
0 ± 0.
1 0.
6 ± 0.
2
1.
1 ± 0.
1 5.
45 ± 0.
3
I Absolute Maximum Ratings Ta = 25°C
Parameter Repetitive peak reverse voltage MA3G751 MA3G751A IF(AV) IFSM Tj Tstg Symbol VRRM Rating 40 45 20 150 −40 to +125 −40 to +125 A A °C °C Unit V
10.
9 ± 0.
5 1 2 3
Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
1 : Anode 2 : Cathode (Common) 3 : Anode TOP-3F (TOP-3 Full-Pack Package )
Marking Symbol • MA3G751 : MA3G751 • MA3G751A : MA3G751A Internal Connection
Note) * : Half sine-wave: 10 ms/cycle
1
2
3
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) MA3G751 MA3G751A Forward voltage (DC) Thermal resistance VF Rth(j-c) Symbol IR VR = 40 V VR = 45 V IF = 10 A Direct current (between junction and case) Conditions Min Typ Max 5 5 0.
55 1.
5 V °C/W Unit mA
Note) Rated input/output frequency: 100 MHz
1
MA3G751, MA3G751A
IF V F
100
Schottky Barrier Diodes (SBD)
IR V R
106 30
PD(AV) IF(AV)
Average forward power PD(AV) (W)
105
Forward current IF (A)
10
Reverse current IR (µA)
Ta = 125°C
Ta = 150°C 125°C 100°C
25
t0 t1 t0 / t1 = 1/6
104
20
1
103
15
1/3 1/2 DC
102
0.
1 100°C 0.
01
25°C
25°C
10
10
5
1
0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2
0
10
20
30
40
50
60
0
0
4
8
12
16
20
24
Forward voltage VF (V)
Reverse voltage VR (V)
Average forward current IF(AV) (A)
IF(AV) TC
32
Average forward current IF(AV) (A)
28 24 20 16 1/6 12 t0 / t1 = 1/2 1/3
t0 t1
DC 8 4 0 20
40
60
80
100
120
140
Case temperature TC (°C)
2
...
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