Schottky Barrier Diode
Description
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3D799 (MA10799)
Silicon epitaxial planar type (cathode common)
3.
0±0.
5
For switching mode power supply ■ Features
/ • Forward current (Average) IF(AV) = 10 A rectification is possible
.
• Cathode-common dual type
e ge • Low forward voltage: VF < 0.
47 V
15.
0±0.
5
13.
7±0.
2 4.
2±0.
2
Solder Dip
nc d ycle sta ■ Absolute Maximum Ratings TC = 25°C
lifec Parameter
Symbol Rating
Unit
a e t Repetitive peak reverse voltage
VRRM
30
V
uc Forward current (Average)
IF(AV)
10
A
n u rod Non-repetitive peak forward
IFSM
120
A
P surge current *
te tin ur .
Junctiontemperature
Tj
−40 to +125
°C
g fo pe tion Storage temperature
Tstg
−40 to +125
°C
in ty a Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
9.
9±0.
3
Unit: mm
4.
6±0.
2 2.
9±0.
2
φ 3.
2±0.
1
1.
4±0.
2 1.
6±0.
2
0.
8±0.
1
2.
6±0.
1 0.
55±0.
15
2.
54±0.
30 5.
08±0.
50
123
1: Anode 2: Cathode
(common) 3: Anode TO-220D-A1 Package
ain cod innclueddems afioninltleotenwnacanoncnceteitnyuupeeeddttyypopeuetdlatt/essct/einnform ■ Electrical Characteristics TC = 25°C ± 3°C
M is tinue lan ma dis tin ab .
ne Parameter
Symbol
Conditions
Min Typ Max Unit
p d on RL ic Forward voltage on ne isc U on Reverse current isc pla d ing nas Thermal resistance (j-c)
VF IR Rth(j-c)
IF = 5 A, TC = 25°C VR = 30 V, TC = 25°C
0.
47
V
3
mA
3.
0 °C/W
D /D w a Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
ce llo ://p 2.
This product is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body an it fo ttp and the leakage of current from the operating equipment.
Mainten Please vis h 3.
Absolute frequency of input and output is 100 MHz.
Publication date: April 2004
Note) The part number in the parenthesis shows conventional part number.
SKH00050BED
1
MA3D799
This product complies with t...
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