Silicon epitaxial planar type
Description
Switching Diodes
MA2B182
Silicon epitaxial planar type
φ 0.
56 max.
Unit : mm
For high-voltage switching circuits, small power rectification
1
I Features
• High reverse voltage (VR = 200 V) • Large output current IO • DO-35 Package
1st Band 2nd Band
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current* Average power dissipation Junction temperature Storage temperature Note) * : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175 −65 to +175 Unit V V mA mA A mW °C °C
2 φ 1.
95 max.
24 min.
1: Cathode 2: Anode JEDEC: DO-35
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Symbol IR VF VR Ct VR = 200 V IF = 200 mA IR = 100 µA VR = 0 V, f = 1 MHz 250 4.
5 Conditions Min Typ Max 200 1.
2 Unit nA V V pF
Note) Rated input/output frequency: 3 MHz
I Cathode Indication
Type No.
Color 1st Band 2nd Band MA2B182 White Green
4.
5 max.
24 min.
COLORED BAND INDICATES CATHODE
1
MA2B182
IF V F
103
1.
6 1.
4
Switching Diodes
VF Ta
10
IR T a
102
1
Forward current IF (mA)
Forward voltage VF (V)
1.
2 1.
0 IF = 100 mA 0.
8 10 mA 0.
6 1 mA 0.
4 0.
2
Reverse current IR (µA)
10
10−1 VR = 200 V 10−2
1
Ta = 150°C 100°C 25°C − 20°C
10−1
10−3
10−2
0
0.
2
0.
4
0.
6
0.
8
1.
0
1.
2
0
10−4
0 40 80 120 160 200
0
20 40 60 80 100 120 140 160 180
Forward voltage VF (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
IR VR
1 Ta = 150°C
10−1
Reverse current IR (µA)
10−2
100°C
10−3
10−4
25°C
10−5
0
40
80
120
160
200
Reverse voltage VR (V)
2
...
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