INFRARED EMITTING DIODES
Description
Infrared Emitting Diodes(GaAs)
K O D E N S H I
EL-1KL3 °§EL-1KL5
DIMENSIONS
The EL-1KL3 and 1KL5 are high-power GaAs IREDs mounted in durable, hermetically sealed TO-18 metal can package, which provides years of reliable performance even under demanding conditions such as use outdoors.
(Unit : mm)
FEATURES
¶UNarrow beam angle ¶U Durable ¶UHigh reliability in demanding environments
APPLICATIONS
¶UOptical emitters ¶UOptical switches ¶U Encoders ¶USmoke sensors
EL-1KL3
EL-1KL5
MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp.
Storage temp.
*2 Soldering temp.
(Ta=2°…) 5
Symbol
VR F I FP I PC Topr.
Tstg.
Tsol.
Rating
5 100 1 170 -40~+100 -55~+125 260
Unit
V mA A mW °… °… °…
*1.
pulse width £∫tw ßZ100 sec.
period •Ï £∫ T=10msec.
*2.
For MAX.
5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=2° 5…)
Symbol
VF R I Ct PO •Îp •ƒ•Î °‚•Ë
Conditions
I= 1 0 0 m A VR=5V f=1MHz F=100mA I F=100mA I F=100mA I
F
EL-1KL3 Max.
Min.
Typ.
1.
35 25 15 940 50 °æ8 1.
7 10
EL-1KL5 Typ.
Max.
Min.
1.
35 25 10 940 50 °æ5 1.
7 10
Unit.
V •Ï A pF mW/sr nm nm deg.
- 1-
Infrared Emitting Diodes(GaAs)
EL-1KL3 °§EL-1KL5
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current Vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
- 2-
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