Silicon Diffused Power Transistor
Description
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
6 0.
2 MAX.
1500 800 10 25 125 5.
0 0.
35 UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC = 6.
0 A; IB = 1.
2 A ICM = 6.
0 A; IB(end) = 0.
85 A
PINNING - SOT93
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-65 MAX.
1500 800 10 25 6 9 150 6 125 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP.
45 MAX.
1.
0 UNIT K/W K/W
1 Turn-off current.
November 1995
1
Rev 1.
200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = V...
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