Silicon Schottky Diode (Low-power Schottky rectifier diode)
Description
Silicon Schottky Diode
BAT 65
Features • Low-power Schottky rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes • Miniature plastic package for surface mounting (SMD)
Type BAT 65
1)
Marking White/C
Ordering Code 1 Q62702-A990 C
Pin Configuration 2 A
Package1) SOD-123
Dimensions see page 313.
Maximum Ratings Parameter Reverse voltage Forward current Average forward current, f = 50 Hz Surage forward current, t ≤ 10 ms Total power dissipation, TS ≤ 100 °C Junction temperature Storage temperature range Symbol
VR IF IFAV IFSM Ptot Tj Tstg
Limit Values 40 750 500 2.
5 600 150 − 55 … + 150
Unit V mA mA A mW °C °C
Semiconductor Group
1
05.
96
BAT 65
Thermal Resistance Parameter Junction - soldering point Junction to ambient1)
1)
Symbol
Limit Values ≤ 80 ≤ 150
Unit K/W K/W
RthJS RthJA
Package mounted on epoxy PCB 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Electrical Characteristics TA = 25 °C, unless otherwise specified.
Parameter Reverse current VR = 30 V VR = 30 V, TA = 65 °C Forward voltage IF = 10 mA IF = 100 mA IF = 250 mA IF = 750 mA Diode capacitance VR = 10 V, f = 1 MHz Symbol Limit Values min.
typ.
– – 0.
305 0.
38 0.
44 0.
580 8.
4 max.
µA – – 50 900 V – – – – 0.
40 – 0.
70 – pF – 12 Unit
IR
VF
CT
Semiconductor Group
2
BAT 65
Forward Current IF = f (VF)
Reverse Current IR = f (VR)
Forward Current IF = f (TS; TA1))
1)
Package mounted on epoxy PCB 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group
3
BAT 65
Permissible Load RthJS = f (tP)
Permissible Pulse Load Ifmax/IfDC = f (tP)
Semiconductor Group
4
...
Similar Datasheet
