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RN2110

Part Number	RN2110
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Apr 16, 2005
Detailed Description	RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, In...
Datasheet	RN2110 PDF File

Overview

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1110, RN1111 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −100 100 150 −55~150 Unit V V V mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 2.
4mg ― ― 2−2H1A Elect...

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