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RN1911

Toshiba Semiconductor
Part Number RN1911
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1910,RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1910,RN1911 Switching, Inverter Circuit, In...
Datasheet PDF File RN1911 PDF File

RN1911
RN1911

Overview
RN1910,RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1910,RN1911 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2910, RN2911 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC P C* Jj Tstg Rating 50 50 5 100 200 150 −55~1...


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