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RN1210

Part Number	RN1210
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 16, 2005
Detailed Description	RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, In...
Datasheet	RN1210 PDF File

Overview

RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2210, RN2211 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 5 100 300 150 −55~150 Unit V V V mA mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.
13g ― ― 2-4E1A Electric...

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