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RN1206

Toshiba Semiconductor
Part Number RN1206
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Swi...
Datasheet PDF File RN1206 PDF File

RN1206
RN1206


Overview
RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2201~2206 Unit: mm Equivalent Circuit and Bias Resistor Values Type No.
RN1201 RN1202 RN1203 RN1204 RN1205 RN1206 R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperatur...



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