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RN1109

Part Number	RN1109
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 16, 2005
Detailed Description	RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Switching, Inverter Circui...
Datasheet	RN1109 PDF File

Overview

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors.
l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2107~2109 Unit: mm Equivalent Circuit and Bias Resistor Values Type No.
RN1107 RN1108 RN1109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1107~1109 RN1107~1109 RN1107 Emitter-base voltage RN1108 RN1109 Collector current Collector power dissipation Junction temperature Storage temperature range RN1107~110...

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