Photocoupler - Toshiba Semiconductor
Description
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP531, TLP532
TLP531,TLP532
Programmable Controllers AC / DC-Input Module Solid State Relay
Unit in mm
The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to an infrared emitting diode in a six lead plastic DIP.
TLP532 hss no-base internal connection for high-EMI environments.
• Collector-emitter voltage • Current transfer ratio
Rank GB • Isolation voltage • UL-recognized • cUL-recognized
: 55 V (min) : 50% (min) : 100% (min) : 2500 Vrms (min) : UL 1577, File No.
E67349 : CSA Component Acceptance Service No.
5A File No.
E67349
Pin Configurations (top view)
TOSHIBA
11-7A8S
Weight: 0.
4g (typ.
)
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1979-07
2019-06-24
Current Transfer Ratio
TLP531,TLP532
Classification (Note 1)
Current Transfer Ratio (%) (IC/IF) IF = 5 mA, VCE = 5 V, Ta = 25°C
Min
Max
Marking Of Classification
Blank
50
600
Blank, Y■, YE, G, G■, GR, B, BL, GB
Rank Y
50
150
YE, Y■
Rank GR
100
300
GR, G, G■
Rank BL
200
600
BL, B
Rank GB
100
600
GB, G, G■, GR, B, BL
Rank YH
75
150
Y■
Rank GRL
100
200
G
Rank GRH
150
300
G■
Rank BLL
200
400
B
Note 1: EX, Rank GB: TLP531 (GB), TLP532(GB)
Note: Application, type name for certification test, please use standard product type name, i, e.
TLP531 (GB): TLP531 TLP532 (GB): TLP532
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-06-24
Absolute Maximum Ratings (Ta = 25°C)
TLP531,TLP532
Characteristic
Symbol
Rating
Unit
Detector
LE D
Forward current Forward current derating (Ta ≥ 50 °C) Peak forward current (100 μs pulse, 100 pps) Reverse voltage Diode power dissipation Diode power dissipation derating (Ta ≥50 °C) Junction temperature Collector-emitter voltage Collector-base voltage (TLP531) Emitter-collector voltage Emitter-base voltage (TLP531) Collector current Power dissipation Power dissipation derating (Ta ≥ 25 °C) Junction tempe...
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