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TLP504A-2

Toshiba Semiconductor

Photocoupler - Toshiba Semiconductor


TLP504A-2
TLP504A-2

PDF File TLP504A-2 PDF File



Description
TLP504A,TLP504A−2 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP504A,TLP504A−2 Programmable Controllers AC / DC−Input Module Solid State Relay Unit in mm The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode.
The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package.
• Collector−emitter voltage: 55 V (min.
) • Current transfer ratio: 50% (min.
) Rank GB: 100% (min.
) • Isolation voltage: 2500 Vrms (min.
) • UL recognized: UL1577, File no.
E67349 TOSHIBA Weight: 0.
54 g (typ.
) 11−10C4 Pin Configurations (top view) TLP504A 1 8 TLP504A-2 1 16 27 36 45 1, 4 : Anode 2, 3 : Cathode 5, 8 : Emitter 6, 7 : Collector 2 3 4 5 6 7 15 14 13 12 11 10 89 1, 4, 5, 8 : Anode 2, 3, 6, 7 : Cathode 9, 12, 13, 16 : Emitter 10, 11, 14, 15 : Collector TOSHIBA Weight: 1.
1 g (typ.
) 11−20A3 1 2007-10-01 TLP504A,TLP504A−2 Absolute Maximum Ratings (Ta = 25°C) Detector LED Characteristic Forward current Forward current derating Pulse forward current Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage Symbol IF ΔIF / °C IFP VR Tj VCEO VECO IC PC ΔPC / °C Tj Tstg Topr Tsol RT ΔPT / °C BVS TLP504A Rating TLP504A−2 60 50 −0.
7 (Ta ≥ 39°C) −0.
5 (Ta ≥ 25°C) 1 (100μs pulse, 100pps) 5 125 55 7 50 150 100 −1.
5 −1.
0 125 −55~150 −55~100 260 (10 s) 250 150 −2.
5 −1.
5 2500 (AC, 1min.
, R.
H.
≤ 60%) (Note 1) Unit mA mA /°C A V °C V V mA mW mW /°C °C °C °C °C mW mW / °C Vrms Note: Using continuously under heavy loads (e.
g.
the application of hig...



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