DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
Description
SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT617
C1 C1 C2 C2 PARTMARKING DETAIL T617
B1 E1 B2 E2 SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE 15 15 5 12 3 -55 to +150 UNIT V V V A A °C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Derate above 25°C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2 2.
5 16 20 62.
5 50 UNIT W W mW/ °C mW/ °C °C/ W °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
3 - 327
ZDT617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) VBE(on) hFE 200 300 200 150 80 8 70 150 0.
9 0.
84 415 450 320 240 80 120 30 120 160 40 MHz pF ns ns MIN.
15 15 5 TYP.
70 18 8.
2 100 100 100 14 100 200 1.
0 1.
0 MAX.
UNIT V V V nA nA nA mV mV mV V V CONDITIONS.
IC=100µ A IC=10mA* IE=100µ A VCB=10V VEB=4V VCES=10V IC=0.
1A, I B=10mA* IC=1A, IB=10mA* IC=3A, IB=50mA* IC=3A, IB=50mA* IC=3A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=12A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=3A IB1=IB2=50mA
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT Cobo ton toff
*Measured under pulsed conditions.
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