PNP Silicon Transistor
Description
Semiconductor
SBC556
PNP Silicon Transistor
Descriptions
• General purpose application • Switching application
Features
• High voltage : VCEO=-55V • Complementary pair with SBC546
Ordering Information
Type NO.
SBC556 Marking SBC556 Package Code TO-92
Outline Dimensions
3.
45±0.
1 4.
5±0.
1 2.
25±0.
1
unit : mm
4.
5±0.
1
0.
4±0.
02
2.
06±0.
1
14.
0±0.
40
1.
27 Typ.
2.
54 Typ.
1 2 3
1.
20±0.
1
0.
38
PIN Connections 1.
Collector 2.
Base 3.
Emitter
KST-9027-000
1
SBC556
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-80 -55 -5 -100 625 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE* fT Cob NF
Test Condition
IC=-2mA, IB=0 VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IB=-5mA VCB=-35V, IE=0 VCE=-5V, IC=-2mA VCB=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ
Min.
Typ.
Max.
-55 110 -900 150 -700 -650 -15 800 4.
5 10
Unit
V mV mV mV nA MHz pF dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-9027-000
2
SBC556
Electrical Characteristic Curves
Fig.
1 PC-Ta Fig.
2 IC-VBE
Fig.
3 IC-VCE
Fig.
4 hFE-IC
Fig.
5 VCE(sat) -IC
KST-9027-000
3
...
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