High Speed IGBT in NPT-technology
Description
SGP20N60HS SGW20N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • High ruggedness, temperature stable behaviour Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ VCE 600V 600V IC 20 20 Eoff 240µJ 240µJ Tj 150°C 150°C Package TO220AB TO-247AC Ordering Code Q67040-S4498 Q67040-S4499
P-TO-220-3-1 (TO-220AB) P-TO-247-3-1 (TO-247AC)
C
G
E
Type SGP20N60HS SGW20N60HS Maximum Ratings Parameter
Symbol VCE IC
Value 600 36 20
Unit V A
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.
05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s
1)
ICpul s EAS
80 80 115 mJ
VGE tSC Ptot Tj , Tstg Tj(tl) -
±20 ±30 10 178 -55.
.
.
+150 175 260
V µs W °C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Rev.
2 Aug-02
Power Semiconductors
SGP20N60HS SGW20N60HS
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient RthJC RthJA TO-220AB TO-247AC 0.
7 62 40 K/W Symbol Conditions Max.
Value Unit
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 20 A T j =2 5 ° C ...
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