1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Description
K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.
0V & 3.
3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (4K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
54Balls FBGA with 0.
8mm ball pitch ( -RXXX : Leaded, -BXXX : Lead Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
ORDERING INFORMATION
Part No.
K4S641633H-R(B)E/N/G/C/L/F75 K4S641633H-R(B)E/N/G/C/L/F1H K4S641633H-R(B)E/N/G/C/L/F1L Max Freq.
133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 54 FBGA Leaded (Lead Free) Interface Package
- R(B)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)
NOTES : 1.
In case of 40MHz Frequency, CL1 can be supported.
2.
Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
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