NPN general purpose transistors - NXP
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
JC549; JC550 NPN general purpose transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 08
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES • Low current (max.
100 mA) • Low voltage (max.
45 V).
APPLICATIONS • General purpose switching and amplification • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: JC559 and JC560.
Fig.
1
1 handbook, halfpage
JC549; JC550
PINNING PIN 1 2 3 base collector emitter DESCRIPTION
2 3
2 1 3
MAM259
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage JC549 JC550 VCEO collector-emitter voltage JC549 JC550 ICM Ptot hFE fT peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open base − − − − 200 100 30 45 200 500 800 − MHz V V mA mW open emitter − − 30 50 V V CONDITIONS MIN.
MAX.
UNIT
1997 Jul 08
2
Philips Semiconductors
Product specification
NPN general purpose transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO JC549 JC550 VCEO collector-emitter voltage JC549 JC550 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − MIN.
JC549; ...
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