SINGLE P-CHANNEL JFET SWITCH
Description
J/SST174 SERIES
Linear Integrated Systems
FEATURES Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage VGDS = 30V VGSS = 30V IG = -50mA 350mW -55 to 150°C -55 to 135°C
D G S 1 2 3
1
SINGLE P-CHANNEL JFET SWITCH
rDS(on) ≤ 85Ω ID(off) = 10pA J SERIES
TO-92 BOTTOM VIEW
SST SERIES
SOT-23 TOP VIEW D S
1 3 2
G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVGSS VGS(F) IGSS IG ID(off) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Forward Voltage Gate Reverse Current Gate Operating Current Drain Cutoff Current MIN 30 -0.
7 0.
01 0.
01 -0.
01 -1 1 nA TYP MAX UNITS V CONDITIONS IG = 1µA, VDS = 0V IG = -1mA, VDS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA VDS = -15V, VGS = 10V
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL VGS(off) IDSS rDS(on) CHARACTERISTIC Gate to Source Cutoff Voltage Drain to Source Saturation Current Drain to Source On Resistance J/SST174 MIN 5 -20 MAX 10 -135 85 J/SST175 MIN 3 -7 MAX 6 -70 125 J/SST176 MIN 1 -2 MAX 4 -35 250 J/SST177 MIN 0.
8 -1.
5 MAX 2.
25 -20 300 UNITS V mA Ω CONDITIONS VDS = -15V, ID = -10nA VDS = -15V, VGS = 0V VGS = 0V, VDS = -0.
1V
Linear Integrated Systems
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SWITCHING CHARACTERISTICS SYMBOL td(on) tr td(off) tf CHARACTERISTIC Turn On Time Turn On Rise Time Turn Off Time Turn Off Fall Time TYP 10 15 10 20 ns UNITS CONDITIONS VGS(L) = 0V VGS(H) = 10V See Switching Circuit
SWITCHING CIRCUIT
VGS(H) VGS(L)
1.
2kΩ
RL
0.
1µF
RG 7.
5kΩ
SWITCHING CIRCUIT PARAMETERS J/SST174 VDD VGG RL RG ID(on) -10V 20V 560Ω 100Ω -15mA J/SST175 -6V 12V 750Ω 220Ω -7mA J/SST176 -6V ...
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