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2SC5075

Toshiba Semiconductor
Part Number 2SC5075
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5075 2SC5075 Switching Regulator and High-Voltage Switching App...
Datasheet PDF File 2SC5075 PDF File

2SC5075
2SC5075

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5075 2SC5075 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications Industrial Applications Unit: mm • High-speed switching: tr = 1.
0 μs (max), tf = 1.
0 μs (max) • High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.
5 A Collector power dissipation Junction temperature PC 1.
3 W Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using contin...


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