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2SC5000

Toshiba Semiconductor
Part Number 2SC5000
Manufacturer Toshiba Semiconductor
Description NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications 2SC5000 Unit: mm • Low collector sa...
Datasheet PDF File 2SC5000 PDF File

2SC5000
2SC5000

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications 2SC5000 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 25 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.
) ma...


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