DatasheetsPDF.com

2SC4690

Part Number	2SC4690
Manufacturer	Toshiba Semiconductor
Description	NPN TRANSISTOR
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications 2SC4690 Unit: mm • High break...
Datasheet	2SC4690 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications 2SC4690 Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1805 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current DC IC 10 A Pulse ICP 20 Base current IB 1 A Collector power dissipation (Tc = 25°C) PC 80 W JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-16F1A Weight: 5.
8 g (typ.
) Not...

Similar Datasheet

2SC460 NPN TRANSISTOR - Hitachi Semiconductor
2SC460 Silicon NPN epitaxial planar type Transistor - Renesas
2SC4600 NPN TRANSISTOR - Sanyo Semicon Device
2SC4600 NPN Triple Diffused Planar Silicon Transistor - Kexin
2SC4601 NPN TRANSISTOR - Sanyo Semicon Device
2SC4601 NPN Triple Diffused Planar Silicon Transistor - Kexin
2SC4602 NPN TRANSISTOR - Sanyo Semicon Device
2SC4602 NPN Triple Diffused Planar Silicon Transistor - Kexin
2SC4603 NPN TRANSISTOR - Fuji Electric
2SC4603 TRIPLE DIFFUSED PLANER TYPE TRANSISTOR - New Jersey Semi-Conductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)