N-Channel MOSFET
Description
FDS2572
October 2001
FDS2572
150V, 0.
047 Ohms, 4.
9A, N-Channel UltraFET® Trench MOSFET
General Description
® UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.
Optimized for Rds(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
• RDS(ON) = 0.
040Ω (Typ.
), VGS = 10V • Qg(TOT) = 29nC (Typ.
), VGS = 10V • Low QRR Body Diode • Maximized efficiency at high frequencies • UIS Rated
Applications
• • • • DC/DC converters Telecom and Data-Com Distributed Power Architectures 48-volt I/P Half-Bridge/Full-Bridge 24-volt Forward and Push-Pull topologies
D D SO-8
D D
DD D D
5 6
4 3 2 1
Pin 1 SO-8
G G S S S S S S
7 8
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V, RθJA = 50 oC/W) Continuous (TC = 100oC, VGS = 10V, RθJA = 50 oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 4.
9 3.
1 Figure 4 2.
5 20 -55 to 150 A A A W mW/oC
o
Ratings 150 ±20
Units V V
C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Case at 10 seconds Thermal Resistance Junction to Case at steady state
(NOTE1) (NOTE2) (NOTE2)
25 50 85
o
C/W C/W
oC/W o
Package Marking and Ordering Information
Device Marking FDS2572 Device FDS2572 Reel Size 330mm Tape Width 12mm Quantity 2500units
©2001 Fairchild Semiconductor Corporation
FDS2572 Rev.
B, October 2001
FDS2572
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 120V VGS = 0V VGS = ±20V TC = 150o 150 1 250 ±100 V µA nA
On Characteristics
VGS(TH) rDS(ON) rDS(ON) Gate to Source T...
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