N-Channel MOSFET
Description
FDS2170N7
May 2003
FDS2170N7
200V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
• 3.
0 A, 200 V.
RDS(ON) = 128 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching, low gate charge (26nC typical) • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
• Synchronous rectifier • DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
200 ± 20
(Note 1a)
Units
V V A W °C
3.
0 20 3.
0 1.
8 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.
5
°C/W
Package Marking and Ordering Information
Device Marking FDS2170N7 Device FDS2170N7 Reel Size 13’’ Tape width 12mm Quantity 2500 units
2003 Fairchild Semiconductor Corporation
FDS2170N7 Rev C3(W)
FDS2170N7
Electrical Characteristics
Symbol
WDSS IAR BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
TA = 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD = 100 V, ID=3.
0 A
Min
Typ
Max Units
370 3 mJ A
Drain-Source Avalanche Ratings
Off Characteristics
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero ...
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