Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Description
FDFS2P103A
August 2002
FDFS2P103A
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The FDFS2P103A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters.
It features a fast switching, low gate charge MOSFET with very low onstate resistance.
The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Features
• –5.
3 A, –30V RDS(ON) = 59 mΩ @ VGS = –10 V RDS(ON) = 92 mΩ @ VGS = –4.
5 V • VF < 0.
35 V @ 1 A (TJ = 125°C) VF < 0.
25 V @ 1 A (TJ = 25°C) • Schottky and MOSFET incorporated into single power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility
D D C C
A 1 A 2
G S A
8 C 7 C 6 D 5 D
S 3 G 4
SO-8
Pin 1
A
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
(Note 1a)
Ratings –30 ±25 –5.
3 –20
2 1.
6 1 0.
9
Units
V V A W
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG VRRM IO
Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current
(Note 1a)
–55 to +150
30 1
°C V A
Package Marking and Ordering Information
Device Marking FDFS2P103A Device FDFS2P103A Reel Size 13’’ Tape width 12mm Quantity 2500 units
2002 Fairchild Semiconductor Corporation
FDFS2P103A Rev C (W)
FDFS2P103A
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
Test Conditions
ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to...
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