DatasheetsPDF.com

3SK293

Part Number	3SK293
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel Dual Gate MOS Type FET
Published	Mar 30, 2005
Detailed Description	3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applicati...
Datasheet	3SK293 PDF File

Overview

3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 16 fF (typ.
) • Low noise figure: NF = 1.
5dB (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 12.
5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current Drain power dissipation ID 30 mA PD 100 mW 1.
Drain 2.
Source 3.
Gate1 Channel temperature Storage temperature range Tch 125 °C Tstg −55 to 125 °C USQ 4.
Gate2 Note: Using continuously under heavy loads (e.
g.
the application of hig...

Similar Datasheet

3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD - NEC
3SK207 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD - NEC
3SK225 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK226 Silicon N Channel Dual Gate MOS Type FET - Toshiba Semiconductor
3SK227 Silicon N-Channel 4-pin MOSFET - Panasonic
3SK228 Silicon NPN Triple Diffused - Hitachi Semiconductor
3SK231 MOSFET - NEC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)