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3SK291

Part Number	3SK291
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel Dual Gate MOS Type FET
Published	Mar 30, 2005
Detailed Description	3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applicati...
Datasheet	3SK291 PDF File

Overview

3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.
016 pF (typ.
) • Low noise figure: NF = 1.
5dB (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 12.
5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current ID 30 mA Drain power dissipation PD 150 mW Channel temperature Tch 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.
g.
the application of high JEDEC ― temperature/current/v...

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