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3SK257

Toshiba Semiconductor
Part Number 3SK257
Manufacturer Toshiba Semiconductor
Description Silicon N Channel Dual Gate MOS Type FET
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 3SK257 TV Tuner, VHF RF Amplifier Applicat...
Datasheet PDF File 3SK257 PDF File

3SK257
3SK257


Overview
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Superior cross modulation performance.
• Low noise figure: NF = 2.
0dB (typ.
) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 13.
5 V Gate 1-source voltage VG1S ±8 V Gate 2-source voltage VG2S ±8 V Drain current ID 30 mA Drain power dissipation PD 100 mW Channel temperature Tch 125 °C Storage temperature range Tstg −55~125 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/vol...



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